Improved critical current density in DI-BSCCO

Quasiparticle Tunnelling and Field-Dependent Critical Current in 2212- BSCCO

Intrinsic c-axis tunnelling in the superconducting state has been measured in zero and finite fields in small mesa structures fabricated on the surface of 2212-BSCCO single crystals. The temperature dependence of the zero-field critical current and quasi-particle conductance is related to microscopic d-wave models in the presence of impurity scattering. The strong field dependence of the c-axis...

Improved Critical-Current-Density Uniformity by Using Anodization

We discuss an anodization technique for a Nb superconductive-electronics-fabrication process that results in an improvement in critical-current-density uniformity across a 150-mm-diameter wafer. We outline the anodization process and describe the metrology techniques used to determine the NbO thickness grown. In the work described, we performed critical current measurements on Josephson junctio...

High Critical Current Density Superconductivity

This project was focused on a basic scientific problem, one that is at the heart of application and development of superconductivity for efficient energy usage. This is improvement in high current density which can only be achieved by learning to pin vortices to the physical structure of its underlying superconducting material. Quantized vortices are the tornado of electrical supercurrents, ubi...

High Critical Current Density MgB

Improved Critical-Current-Density Uniformity of Nb Superconducting Fabrication Process Using Anodization Personnel

cross-wafer standard deviation of Jc was typically ~ 5% for anodized wafers but was ≥15% for unanodized wafers (Figure 6). A low variation in Jc results in a higher yield of device chips per wafer with the desired current density. As a result of the improved cross-wafer distribution, the cross-chip uniformity is greatly improved as well; typically < 1% for anodized chips. Low cross-chip Jc vari...